| PART |
Description |
Maker |
| TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 马鞍山暂定东芝数字集成电路硅栅CMOS
512-MBIT (64M x 8 BITS) CMOS NAND E2PROM
|
Toshiba, Corp.
|
| TPCF8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| TC58FV321 TC58FVB321FT TC58FVB321FT-10 TC58FVB321F |
(TC58FVxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
32-MBIT (4M 】 8 BITS / 2M 】 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| TPCF830307 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Semiconductor
|
| TPCA8053-H |
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H)
|
Toshiba Semiconductor
|
| MP4203 |
TOSHIBA POWER MOS FET MODULE SILICON P CHANNEL MOS TYPE
|
Toshiba Semiconductor
|
| TPCS8101 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM6J409TU-14 |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V)
|
Toshiba Semiconductor
|
| TPCF8001 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
|
Toshiba Semiconductor
|
| TPC6105 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
|
Toshiba Semiconductor
|
| TPC8014 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
|
Toshiba Semiconductor
|
